Effects of Postdeposition Annealing on Electrical Properties of Mo-Doped Indium Oxide (IMO) Thin Films Deposited by RF Magnetron Cosputtering
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2006-11-25
著者
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Nakada Tokio
Department Of Electrical Engineering And Electronics Aoyama Gakuin University
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Yamada Naoomi
Department Of Electrical Engineering And Electronics Aoyama Gakuin University
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Nakada Tokio
Department Of Dermatology Showa University School Of Medicine
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TATEJIMA Tsukasa
Department of Electrical Engineering and Electronics, Aoyama Gakuin University
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ISHIZAKI Hiroki
Department of Electrical Engineering and Electronics, Aoyama Gakuin University
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Ishizaki Hiroki
Department Of Electrical Engineering And Electronics Aoyama Gakuin University
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Tatejima Tsukasa
Department Of Electrical Engineering And Electronics Aoyama Gakuin University
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