Growth and Properties of Sputter-Deposited α-HgS Films in Hg Vapor
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概要
- 論文の詳細を見る
α-HgS films have been grown by rf-sputtering in Hg vapor. The growth and structure of the films deposited on glass, mica, and cleaved CaF_2 (111) substrates are examined by electron diffraction and scanning electron microscopy. The deposition temperature varies from 100 to 150℃, while the deposition rate ranges from 45 to 75 Å/min. Films with a pronounced [0001] fiber texture are grown on all the substrates at 100℃. As the substrate temperature increases to 150℃, epitaxial growth is observed on cleaved CaF_2 (111) substrates, but not on glass or mica substrates. Optical transmission and photoconductivity data on annealed α-HgS films deposited on glass substrates are presented.
- 社団法人応用物理学会の論文
- 1980-05-05
著者
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KUNIOKA Akio
Department of Electrical Engineering and Electronics, Aoyama Gakuin University
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Kunioka Akio
Department Of Electric Engineering And Electronics Aoyama Gakuin University
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Nakada Tokio
Department Of Dermatology Showa University School Of Medicine
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