Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures

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概要

• 論文の詳細を見る
• 2006-05-11

著者

• OGITA Masami

  Sapporo National Hospital

• Ogita Masami

  Graduate School Of Electronic Science And Technology Of Shizuoka University

• Ogita Masami

  Faculty Of Engineering Shizuoka University

• Ogita Masami

  Graduate School Of Electronic Science And Technology Shizuoka University

• Isai Masaaki

  Gsest Of Shizuoka University

• Bartic Marilena

  GSEST of Shizuoka University

• BARTIC Marilena

  Faculty of Physics, Al. I. Cuza University

• BABAN Cristian-Ioan

  GSEST of Shizuoka University

• ISAI Masaaki

  Faculty of Physics, Al. I. Cuza University

• Baban Cristian-ioan

  Faculty Of Physics Al. I. Cuza University

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• Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
• Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
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