Influence of the thickness on β-Ga2O3 oxygen gas sensor at high temperature (電子デバイス)

概要

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β-Ga_2O_3 thin films sensors in a sandwich structure with various thicknesses of 380 nm to 1250 nm approximately by sputtering technique. The oxygen sensing characteristics were evaluated as a function of film thickness in N_2/O_2gas stream mixture at high temperature, 1000℃. The electrical resistance of thin films was increased rnonotonicaily with an increasing film thickness. It was found that both the response time and sensitivity of β-Ga_2O_3 sensors to oxygen gas were decreasing when film thickness decreased. The relationship between gas sensing properties and film thickness was discussed on the basis of oxygen gas reactivity on the film surface and inside the oxide films at 1000℃.
社団法人電子情報通信学会の論文
2007-05-17