Oxygen Sensitivity in Gallium Oxide Thin Films and Single Crystals at High Temperatures
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概要
- 論文の詳細を見る
In this paper, the oxygen sensitivity of gallium oxide thin films and single crystals at high temperatures is presented. To investigate the oxygen sensing mechanism at high temperature, we used sputtered $\beta$-Ga2O3 thin films and $\beta$-Ga2O3 single crystals with different electrode geometries. For $\beta$-Ga2O3 single crystals: a response time of about 10 s was achieved, while for $\beta$-Ga2O3 thin-film this was about 11 s. For single crystal samples the response time does not depend on the type of electrode. This can be explained by the combination of a greater influence of surface effects and smaller influence of bulk effects.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-15
著者
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Ogita Masami
Graduate School Of Electronic Science And Technology Of Shizuoka University
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BARTIC Marilena
Graduate School of Electronic Science and Technology of Shizuoka University
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TOYODA Yoshitaka
Graduate School of Electronic Science and Technology of Shizuoka University
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Baban Cristian-ioan
Faculty Of Physics Al. I. Cuza University
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Bartic Marilena
Graduate School of Electronic Science and Technology of Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
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Baban Cristian-Ioan
Faculty of Physics, "Al. I. Cuza" University, Bd. Carol 11, Iasi R-7005006, Romania
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Ogita Masami
Graduate School of Electronic Science and Technology of Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
関連論文
- Oxygen Sensitivity in Gallium Oxide Thin Films and Single Crystals at High Temperatures
- Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
- Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures
- Analysis of Oxygen Sensing Mechanism in Gallium Oxide at high temperature
- Critical micelle concentration (CMC) sensor based on U-shaped optical fiber doped porous Sol-Gel cladding
- Influence of the thickness on β-Ga2O3 oxygen gas sensor at high temperature (シリコン材料・デバイス)
- Influence of the thickness on β-Ga2O3 oxygen gas sensor at high temperature (電子部品・材料)
- Influence of the thickness on β-Ga2O3 oxygen gas sensor at high temperature (電子デバイス)
- Oxygen Sensitivity in Gallium Oxide Thin Films and Single Crystals at High Temperatures