Oxygen Sensitivity in Gallium Oxide Thin Films and Single Crystals at High Temperatures
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-15
著者
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OGITA Masami
Sapporo National Hospital
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Ogita Masami
Graduate School Of Electronic Science And Technology Of Shizuoka University
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Ogita Masami
Graduate School Of Electronic Science And Technology Shizuoka University
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BARTIC Marilena
Graduate School of Electronic Science and Technology of Shizuoka University
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TOYODA Yoshitaka
Graduate School of Electronic Science and Technology of Shizuoka University
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BABAN Cristian-Ioan
Faculty of Physics, "Al. I. Cuza" University
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- Oxygen Sensitivity in Gallium Oxide Thin Films and Single Crystals at High Temperatures
- Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
- Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
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