High Temperature Oxygen Sensor Using a Pt–Ga2O3–Pt Sandwich Structure

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概要

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• In this paper an oxygen sensor based on Ga2O3 films was analyzed. We propose a sensor using a Pt–Ga2O3–Pt structure with a bottom Pt layer electrode and a mesh type Pt electrode atop the Ga2O3 film. Ga2O3 films were prepared by rf magnetron sputtering from a powder target using Ar as the sputtering gas. At high temperatures Ga2O3 thin films behave like an n-type semiconductor due to oxygen vacancies. Films obtained by this method have a higher electrical conductivity due to a higher oxygen vacancy concentration. The sensing characteristics were investigated at 1000°C. The sensor shows good sensitivity to oxygen and a response time of about 27 s.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-10-15

著者

• Ogita Masami

  Faculty Of Engineering Shizuoka University

• BABAN Cristian-Ioan

  SVBL of Shizuoka University

• TOYODA Yoshitaka

  Faculty of Engineering, Shizuoka University

• Baban Cristian-Ioan

  SVBL of Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan

• Ogita Masami

  Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan

• Toyoda Yoshitaka

  Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan

関連論文

• High Temperature Oxygen Sensor Using a Pt-Ga_2O_3-Pt Sandwich Structure
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• Improvement in the Selectivity of Semiconducting Resistive-type NO_2 Sensors Linked with Calorimetric Hydrocarbon Sensors
• Optical Properties of LSI Mask Using Cover Substrate
• High Temperature Oxygen Sensor Using a Pt–Ga2O3–Pt Sandwich Structure

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