Nanometer-Sized Silicon Crystallites Prepared by Excimer Laser Ablation in Constant Pressure Inert Gas Ambient

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• Yamada Y

  Fuji Electric Co. Ltd. Nagano Jpn

• YAMADA Yuka

  Matsushita Research Institute Tokyo, Inc.

• ORII Takaaki

  Institute of Applied Physics, University of Tsukuba

• TAKEYAMA Shigeru

  Matsushita Research Institute Tokyo, Inc.

• YOSHIDA Takehito

  Matsushita Research Institute Tokyo, Inc.

• Yoshida T

  Tokin Co. Kanagawa Jpn

• Takeyama Shigeru

  Matsushita Research Institute Tokyo Inc.

• Orii Takaaki

  Institute Of Applied Physics University Of Tsukuba

• Yamada Yuka

  Matsushita Research Institute Tokyo Inc.

• Yoshida Takehito

  Matsushita Research Institute Tokyo Inc.

関連論文

• Fabrication of Tungsten-Carbon Multilayers for Soft X-Ray Optics Using Excimer-Laser-Induced Chemical Vapor Deposition Technique
• Thickness Control of Multilayer Films in Laser-Induced Chemical Vapor Deposition
• Magnetron Sputter-Deposited A1_2O_3/SiO_2 Multilayer Coatings for Kilowatt Excimer Lasers with High Repetition Rates
• Laser-Beam-Scanning Chemical Vapor Deposition Technique for Controlling the Spatial Thickness Distribution of Thin Films
• Optical Properties of Silicon Nanocrystallites Prepared by Excimer Laser Ablation in Inert Gas
• Nanometer-Sized Silicon Crystallites Prepared by Excimer Laser Ablation in Constant Pressure Inert Gas Ambient
• Optical Properties of Silicon Nanocrystallites Prepared by Excimer Laser Ablation in Inert Gas

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