Optical Properties of Silicon Nanocrystallites Prepared by Excimer Laser Ablation in Inert Gas

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概要

• 論文の詳細を見る

• Optical properties of silicon (Si) nanocrystallites prepared by excimer laser ablation in constant-pressure inert gas have been studied in relation to the particle size. Visible photoluminescence (PL) bands in the red and green spectral regions appear at room temperature after an oxidation process. The red PL band is independent of the particle size and is stable without degradation by excitation light irradiation. It is concluded that the red PL is emitted from the surface states of the oxidized Si nanocrystallites. In contrast, the green PL band depends on the particle size. The green PL intensity decreases during excitation light irradiation in air, and then recovers in the subsequent vacuum evacuation. These results suggest that the origin of the green PL is associated with a quantum confinement effect of Si nanocrystallites.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• Umezu Ikurou

  Faculty Of Industrial Science And Technology Science University Of Tokyo

• Takeyama Shigeru

  Matsushita Research Institute Tokyo Inc.

• Orii Takaaki

  Institute Of Applied Physics University Of Tsukuba

• Yamada Yuka

  Matsushita Research Institute Tokyo Inc.

• Yoshida Takehito

  Matsushita Research Institute Tokyo Inc.

• Umezu Ikurou

  Faculty of Industrial Science and Technology, Science University of Tokyo, Noda, Chiba 278, Japan

• Yoshida Takehito

  Matsushita Research Institute Tokyo, Inc., 3-10-1 Higashimita, Tama-ku, Kawasaki 214, Japan

• Orii Takaaki

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan

関連論文

• Fabrication of Tungsten-Carbon Multilayers for Soft X-Ray Optics Using Excimer-Laser-Induced Chemical Vapor Deposition Technique
• Thickness Control of Multilayer Films in Laser-Induced Chemical Vapor Deposition
• Magnetron Sputter-Deposited A1_2O_3/SiO_2 Multilayer Coatings for Kilowatt Excimer Lasers with High Repetition Rates
• Laser-Beam-Scanning Chemical Vapor Deposition Technique for Controlling the Spatial Thickness Distribution of Thin Films
• Nanometer-Sized Silicon Crystallites Prepared by Excimer Laser Ablation in Constant Pressure Inert Gas Ambient
• Structure of Amorphous SiN_x:H Studied by Photoemission and Infrared Absorption
• Analysis of Joule Heat in a-Si:H Film by Photothermal Deflection Spectroscopy
• Optical Bond Gap and Tauc Gap in a-SiO_x:H and a-SiN_x:H Films
• Investigation of Surface Passivation Effect of a-SiN_x:H on a-Si:H by Photothermal Deflection Spectroscopy
• Optical Properties of Silicon Nanocrystallites Prepared by Excimer Laser Ablation in Inert Gas

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