Optical Properties of Silicon Nanocrystallites Prepared by Excimer Laser Ablation in Inert Gas
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概要
- 論文の詳細を見る
- 1996-02-01
著者
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Yamada Y
Fuji Electric Co. Ltd. Nagano Jpn
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YAMADA Yuka
Matsushita Research Institute Tokyo, Inc.
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ORII Takaaki
Institute of Applied Physics, University of Tsukuba
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UMEZU Ikurou
Faculty of Industrial Science and Technology, Science University of Tokyo
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TAKEYAMA Shigeru
Matsushita Research Institute Tokyo, Inc.
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YOSHIDA Takehito
Matsushita Research Institute Tokyo, Inc.
関連論文
- Fabrication of Tungsten-Carbon Multilayers for Soft X-Ray Optics Using Excimer-Laser-Induced Chemical Vapor Deposition Technique
- Thickness Control of Multilayer Films in Laser-Induced Chemical Vapor Deposition
- Magnetron Sputter-Deposited A1_2O_3/SiO_2 Multilayer Coatings for Kilowatt Excimer Lasers with High Repetition Rates
- Laser-Beam-Scanning Chemical Vapor Deposition Technique for Controlling the Spatial Thickness Distribution of Thin Films
- Optical Properties of Silicon Nanocrystallites Prepared by Excimer Laser Ablation in Inert Gas
- Nanometer-Sized Silicon Crystallites Prepared by Excimer Laser Ablation in Constant Pressure Inert Gas Ambient
- Structure of Amorphous SiN_x:H Studied by Photoemission and Infrared Absorption
- Analysis of Joule Heat in a-Si:H Film by Photothermal Deflection Spectroscopy