Structure of Amorphous SiN_x:H Studied by Photoemission and Infrared Absorption

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概要

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• We present an X-ray photoemission (XPS) and infrared absorption (IR) study of hydrogenated amorphous silicon-nitride (SiN_x:H) films which were prepared by plasma decomposition of SiH_4 and NH_3. Both Si 2p (XPS) and Si-H (IR) peaks are decomposed to contributions from Si-centered tetrahedrons. The peak shift in both XPS and IR can be divided into two compositional regions : below and above x=1.0. Peak energy increases gradually with x until it reaches 1.0. For x>1.0, the increment of peak shift is small. There are no particular features at around stoichiometric composition, x=1.33. The kink point at around x=1.0 and maximum composition of x=1.7 are discussed in terms of Sicentered tetrahedrons. The Si-Si bond, which decreased with increasing source gas ratio R (R=[NH_3]/[SiH_4]), did not disappear even though a large gas ratio R was given. This feature is important in accounting for the structure of the films.

• 社団法人応用物理学会の論文
• 1991-10-15

著者

• Maeda Keiji

  Faculty Of Industrial Science And Technology Science University Of Tokyo

• Maeda Keiji

  Faculty Of Industrial Science And Tecnnology Science University Of Tokyo

• UMEZU Ikurou

  Faculty of Industrial Science and Technology, Science University of Tokyo

• Umezu I

  Department Of Applied Physics Konan University:hightechnology Research Center Konan University

• Umezu Ikurou

  Faculty Of Industrial Science And Technology Science University Of Tokyo

関連論文

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• Correlation between Photoluminescence Intensity and Micro Structure in Amorphous Silicon Films Prepared by Reactive RF Sputtering
• Optical Properties of Silicon Nanocrystallites Prepared by Excimer Laser Ablation in Inert Gas
• Structure of Amorphous SiN_x:H Studied by Photoemission and Infrared Absorption
• Analysis of Joule Heat in a-Si:H Film by Photothermal Deflection Spectroscopy
• Estimation of Non-Radiative Transition Rate in Tetracene-Doped Anthracene by Photoacoustic Spectroscopy : Chemistry (incl. physical process)
• Optical Bond Gap and Tauc Gap in a-SiO_x:H and a-SiN_x:H Films
• Investigation of Surface Passivation Effect of a-SiN_x:H on a-Si:H by Photothermal Deflection Spectroscopy
• Analysis of Si Schottky Barrier Characteristics Based on a New Interfacial Layer Model
• Optical Properties of Silicon Nanocrystallites Prepared by Excimer Laser Ablation in Inert Gas
• Properties of a-SiN0.7:H Films in High Electric Field

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