Investigation of Surface Passivation Effect of a-SiN_x:H on a-Si:H by Photothermal Deflection Spectroscopy

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概要

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• Optical absorption of surface- and interface-states in a-Si:H and a-SiN_x:H (x=1.2 and 1.7) films was measured by photothermal deflection spectroscopy. The surface-state absorption of a-Si:H was reduced by passivation of the a-SiN_<1.7>:H or a-SiN_<1.2>:H layer. The surface absorptions of a-SiN_<1.7>:H and a-SiN_<1.2>:H are lower than that of a-Si:H. The origin of free surface absorption of a-Si:H was discussed in terms of the native oxide layer.

• 社団法人応用物理学会の論文
• 1994-06-15

著者

• Maeda Keiji

  Faculty Of Industrial Science And Technology Science University Of Tokyo

• Umezu Ikurou

  Faculty Of Industrial Science And Technology Science University Of Tokyo

• DAIGO Michio

  Faculty of Industrial Science and Technology, Science University of Tokyo

• Daigo Michio

  Faculty Of Industrial Science And Technology Science University Of Tokyo

関連論文

• Structure of Amorphous SiN_x:H Studied by Photoemission and Infrared Absorption
• Analysis of Joule Heat in a-Si:H Film by Photothermal Deflection Spectroscopy
• Optical Bond Gap and Tauc Gap in a-SiO_x:H and a-SiN_x:H Films
• Investigation of Surface Passivation Effect of a-SiN_x:H on a-Si:H by Photothermal Deflection Spectroscopy
• Analysis of Si Schottky Barrier Characteristics Based on a New Interfacial Layer Model
• Optical Properties of Silicon Nanocrystallites Prepared by Excimer Laser Ablation in Inert Gas
• Properties of a-SiN0.7:H Films in High Electric Field

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