Maeda Keiji | Faculty Of Industrial Science And Technology Science University Of Tokyo
スポンサーリンク
概要
関連著者
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Maeda Keiji
Faculty Of Industrial Science And Technology Science University Of Tokyo
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Umezu Ikurou
Faculty Of Industrial Science And Technology Science University Of Tokyo
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UMEZU Ikurou
Faculty of Industrial Science and Technology, Science University of Tokyo
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Ikoma Hideaki
Faculty Of Science And Technology Science University Of Tokyo
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Maeda Kohji
Department Of Physics Engineering Mie University
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Maeda K
Semiconductor Process Laboratory Co. Ltd.
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Maeda Keiji
Faculty Of Industrial Science And Tecnnology Science University Of Tokyo
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Ibaraki Nobuki
Electron Device Engineering Laboratory Toshiba Corporation
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Umezu I
Department Of Applied Physics Konan University:hightechnology Research Center Konan University
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Miyamoto Ken-ichi
Faculty Of Industrial Science And Technology Science University Of Tokyo
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Sakamoto Naomichi
Faculty of Industrial Science and Technology, Science University of Tokyo
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DAIGO Michio
Faculty of Industrial Science and Technology, Science University of Tokyo
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Maeda Kazuo
Semiconductor Division Fujitsu Ltd.
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Daigo Michio
Faculty Of Industrial Science And Technology Science University Of Tokyo
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Sakamoto Naomichi
Faculty Of Industrial Science And Technology Science University Of Tokyo
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Maeda Keiji
Faculty of Industrial Science and Technology, Science University of Tokyo, Noda 278
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Fukuda Kaichi
Electron Device Engineering Laboratory, Toshiba Corp., Shin-sugita, Isogo-ku, Yokohama 235
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Matsumura Kunio
Electron Device Engineering Laboratory, Toshiba Corp., Shin-sugita, Isogo-ku, Yokohama 235
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Ibaraki Nobuki
Electron Device Engineering Laboratory, Toshiba Corp., Shin-sugita, Isogo-ku, Yokohama 235
著作論文
- Structure of Amorphous SiN_x:H Studied by Photoemission and Infrared Absorption
- Analysis of Joule Heat in a-Si:H Film by Photothermal Deflection Spectroscopy
- Optical Bond Gap and Tauc Gap in a-SiO_x:H and a-SiN_x:H Films
- Investigation of Surface Passivation Effect of a-SiN_x:H on a-Si:H by Photothermal Deflection Spectroscopy
- Analysis of Si Schottky Barrier Characteristics Based on a New Interfacial Layer Model
- Properties of a-SiN0.7:H Films in High Electric Field