Ibaraki Nobuki | Electron Device Engineering Laboratory Toshiba Corporation
スポンサーリンク
概要
関連著者
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Ibaraki Nobuki
Electron Device Engineering Laboratory Toshiba Corporation
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Kakkad Ramesh
Electron Device Engineering Laboratory Toshiba Corporation
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Maeda Keiji
Faculty Of Industrial Science And Technology Science University Of Tokyo
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SHIMANO Takuya
Electron Device Engineering Laboratory, Toshiba Corporation
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Shimano Takuya
Electron Device Engineering Laboratory Toshiba Corporation
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Maeda Keiji
Faculty of Industrial Science and Technology, Science University of Tokyo, Noda 278
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Fukuda Kaichi
Electron Device Engineering Laboratory, Toshiba Corp., Shin-sugita, Isogo-ku, Yokohama 235
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Matsumura Kunio
Electron Device Engineering Laboratory, Toshiba Corp., Shin-sugita, Isogo-ku, Yokohama 235
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Ibaraki Nobuki
Electron Device Engineering Laboratory, Toshiba Corp., Shin-sugita, Isogo-ku, Yokohama 235
著作論文
- Effect of Ion Doping Conditions on Electrical Conductivity of Amorphous Silicon Films and Its Application to Thin Film Transistors
- Properties of a-SiN0.7:H Films in High Electric Field