Precise Measurement of Strain in SOI Induced by Local Oxidation
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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Ogura Atsushi
Microelectronics Research Laboratories Nec Corporation
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Kimura Shigeru
Microelectronics Research Laboratories Nec Corporation
関連論文
- Evaluation of Electron Trap Levels in SIMOX Buried Oxide by Transient Photocurrent Spectroscopy
- Silicon Surface Imperfection Probed with a Novel X-Ray Diffraction Technique and Its Influence on the Reliability of Thermally Grown Silicon Oxide
- Novel Process for Visible Light Emission from Si Prepared by Ion Irradiation
- Minute Strain Fields due to Vacancy Type Defects in a Rapidly Cooled Czochralski-Grown Silicon Crystal
- Nonseeded Crystalline Orientation Control for Si-on-Insulator Laser Recrystallization
- Precise Measurement of Strain in SOI Induced by Local Oxidation
- Thinning of SOI Bonded Wafers by Applying Voltage during KOH Etching