Thinning of SOI Bonded Wafers by Applying Voltage during KOH Etching
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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OGURA Atsushi
Microelectronics Research Laboratories, NEC Corporation
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Ogura Atsushi
Microelectronics Research Laboratories Nec Corporation
関連論文
- Evaluation of Electron Trap Levels in SIMOX Buried Oxide by Transient Photocurrent Spectroscopy
- Nonseeded Crystalline Orientation Control for Si-on-Insulator Laser Recrystallization
- Precise Measurement of Strain in SOI Induced by Local Oxidation
- Thinning of SOI Bonded Wafers by Applying Voltage during KOH Etching