Nonseeded Crystalline Orientation Control for Si-on-Insulator Laser Recrystallization

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概要

• 論文の詳細を見る

• The orientation control technique for Si-on-insulator fabrication by laser recrystallization with artificial seeds, called 2-step laser annealing, is demonstrated. In this technique, a crystalline substrate is not used as a seeding material. Where the controllability is defined as the probability of having the orientation within 20°from (100), 94% controllability was successfully achieved for artificial seeds, and at a distance of 50 μm from the sseds, controllability was 73%.

• 社団法人応用物理学会の論文
• 1990-09-20

著者

• Ogura Atsushi

  Microelectronics Research Laboratories Nec Corporation

関連論文

• Evaluation of Electron Trap Levels in SIMOX Buried Oxide by Transient Photocurrent Spectroscopy
• Nonseeded Crystalline Orientation Control for Si-on-Insulator Laser Recrystallization
• Precise Measurement of Strain in SOI Induced by Local Oxidation
• Thinning of SOI Bonded Wafers by Applying Voltage during KOH Etching

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