Thermoelectric Properties of RF-Sputtered SiGe Thin Film for Hydrogen Gas Sensor
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-09-15
著者
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SHIN Woosuck
Advanced Manufacturing Research Institute, Sensor Integration Group, National Institute of Advanced
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IZU Noriya
Advanced Manufacturing Research Institute, Sensor Integration Group, National Institute of Advanced
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MATSUBARA Ichiro
Advanced Manufacturing Research Institute, Sensor Integration Group, National Institute of Advanced
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TAJIMA Kazuki
National Institute of Advanced Industrial Science and Technology (AIST)
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TAJIMA Kazuki
Advanced Manufacturing Research Institute, AIST
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MURAYAMA Norimitsu
Advanced Manufacturing Research Institute, AIST
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QIU Fabin
Advanced Manufacturing Research Institute, AIST
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SAWAGUCHI Naoya
Advanced Manufacturing Research Institute, AIST
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- Resistive Oxygen Sensors Using Cerium Oxide Thin Films Prepared by Metal Organic Chemical Vapor Deposition and Sputtering
- Thermoelectric Properties of RF-Sputtered SiGe Thin Film for Hydrogen Gas Sensor
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- 07-P-04 RF-Sputtered Polycrystalline Si_Ge_ Thin Film for Thermoelectric Hydrogen Sensor
- Toward Solid-State Switchable Mirror Devices Using Magnesium-Rich Magnesium–Nickel Alloy Thin Films
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- 水素ガスセンサの応答性能の実際的試験法
- Thermoelectric Properties of RF-Sputtered SiGe Thin Film for Hydrogen Gas Sensor
- Degradation of Switchable Mirror Based on Mg–Ni Alloy Thin Film
- Micro-Thermoelectric Hydrogen Sensor of Three Different Membrane Structures