Resistive Oxygen Sensors Using Cerium Oxide Thin Films Prepared by Metal Organic Chemical Vapor Deposition and Sputtering
スポンサーリンク
概要
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We fabricated oxygen sensors with thin films of single-phase cerium oxide prepared by metal organic chemical vapor deposition (MOCVD) and sputtering, and investigated the properties of both sensors. The response times of the thin films prepared by MOCVD and sputtering were about 9 s when the films were heated to 888 K for the first time. However, the response time increased each time, each sensor was heated to 1274 K. The deterioration of the response time in this study seems to be related to increasing crystallite size. It was concluded that the thin film prepared by sputtering was suitable for oxygen sensors compared with that prepared by MOCVD.
- 2004-10-15
著者
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SHIN Woosuck
Advanced Manufacturing Research Institute, Sensor Integration Group, National Institute of Advanced
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IZU Noriya
Advanced Manufacturing Research Institute, Sensor Integration Group, National Institute of Advanced
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MURAYAMA Norimitsu
Advanced Manufacturing Research Institute, AIST
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Kanzaki Shuzo
Advanced Manufacturing Research Institute National Institute Of Advanced Industrial Science And Tech
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Matsubara Ichiro
Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimo-Shidami Moriyama-ku, Nagoya 463-8560, Japan
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Matsubara Ichiro
Advanced Manufacturing Research Institute, AIST, Shimo-Shidami, Moriyama-ku, Nagoya 463-8560, Japan
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Izu Noriya
Advanced Manufacturing Research Institute, AIST, Shimo-Shidami, Moriyama-ku, Nagoya 463-8560, Japan
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Shin Woosuck
Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimo-Shidami Moriyama-ku, Nagoya 463-8560, Japan
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Shin Woosuck
Advanced Manufacturing Research Institute, AIST, Shimo-Shidami, Moriyama-ku, Nagoya 463-8560, Japan
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