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Univ. Tsukuba Tsukuba Jpn | 論文
- Substrate Specificity of α-Glucuronidase Isolated from Snail Acetone Powder
- The Recovery of the Chiral Symmetry in Lattice Gross-Neveu Model : Particles and Fields
- Rapid and Reversible Nitrate Inhibition of Nodule Growth and N_2 Fixation Activity in Soybean (Glycine max (L.) Merr.)
- Possible Involvement of Photosynthetic Supply in Changes of Nodule Characteristics of Hypernodulating Soybeans
- INACTIVATION OF BARLEY NITRATE REDUCTASE BY 14-3-3 PROTEIN
- Determination of Leghemoglobin Components and Xylem Sap Composition by Capillary Electrophoresis in Hypernodulation Soybean Mutants Cultivated in the Field
- Changes in concentration of leghemoglobin components in hypernodulation mutants of soybean
- Sequencing and Expression of Sheep Angiotensinogen cDNA
- Effect of different dialyzers on defensins during hemodialysis
- Fabrication of temperature sensor using thermopile based on silicon on insulator (SOI) structure (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Fabrication of temperature sensor using thermopile based on silicon on insulator (SOI) structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Three Different Forms of Hydrogen Molecules in Silicon
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
- Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
- Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams