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United Microelectronics Corp. Technology Development Division | 論文
- The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
- Optimization of Short Channel Effect With Arsenic Halo Implant through Polysilicon Gate : Semiconductors
- Shallow-Trench Isolation With Raised-Field-Oxide Structure
- A Novel Shallow Trench Isolation with Mint-Spacer Technology
- High Performance Sub-0.1μm Dynamic Threshold MOSFET Using Indium Channel Implantation
- A Novel Shallow Trench Isolation with Mini-Spacer Technology
- The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
- Optimization of Active Geometry Configuration and Shallow Trench Isolation (STI) Stress for Advanced CMOS Devices