スポンサーリンク
Toyota Technological Institute, Nagoya 468-8511, Japan | 論文
- Synthesis of Ammonia through Direct Chemical Reactions between an Atmospheric Nitrogen Plasma Jet and a Liquid
- Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence
- Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
- Numerical Analysis for Radiation Resistant InGaP Solar Cell
- Chemical Vapor Deposition of GeSbTe Thin Films for Next-Generation Phase Change Memory
- Scaling Property of the F–AF Spin Chain Near the Exactly Solvable Point
- Structural and Molecular Changes of C Thin Films with Incorporated Magnesium Atoms (Special Issue : Solid State Devices and Materials (2))
- Read-head Conditions for Obtaining Areal Recording Density of 5.8 Tbit/in.2 on a Bit-Patterned Medium
- Study of MgAl2O4(111) Spinel Surface Using Noncontact Atomic Force Microscopy
- Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
- Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Improvements in Optoelectrical Properties of GaAsN by Controlling Step Density during Chemical Beam Epitaxy Growth
- Scanning Tunneling Microscopy Study of Pd Adsorption on Pt(111)
- Melting Temperature of Metals Based on the Nearly Free Electron Model
- Erratum: ``Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films''
- Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells
- III--V--N Materials for Super-High Efficiency Multi Junction Solar Cells
- Reversal of Domain Wall Motion in Perpendicularly Magnetized TbFeCo-Based Wires: Size Dependence
- Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells (Special Issue : Solid State Devices and Materials)