スポンサーリンク
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan | 論文
- Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime
- Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
- Numerical Analysis for Radiation Resistant InGaP Solar Cell
- Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge
- Wide-Angle Antireflection Effect of Subwavelength Structures for Solar Cells
- Study on Iron Distribution and Electrical Activities at Grain Boundaries in Polycrystalline Silicon Substrate for Solar Cells
- Chemical Vapor Deposition of GeSbTe Thin Films for Next-Generation Phase Change Memory
- Observation of In-Plane Asymmetric Strain Relaxation during Crystal Growth and Growth Interruption in InGaAs/GaAs(001)
- Improvements in Optoelectrical Properties of GaAsN by Controlling Step Density during Chemical Beam Epitaxy Growth
- Crystal Structures of Copper–Phthalocyanine on C60(111) Surface Grown by Molecular Beam Epitaxy
- Effects of Residual Carbon and Hydrogen Atoms on Electrical Property of GaAsN Films Grown by Chemical Beam Epitaxy
- Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source
- Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Carbon Reduction in GaAsN Thin Films by Flow-Rate-Modulated Chemical Beam Epitaxy
- Erratum: ``Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films''
- Nondestructive Depth Profiling by Specimen Tilting Using Scanning Electron Microscope-Energy Dispersive X-Ray Spectrometer