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Toshiba Corp. Kawasaki | 論文
- Thermal Analysis for GaN Laser Diodes
- Analysis of Device Characteristics for InGaN Semiconductor Lasers
- Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes
- Reactive Ion Beam Etching and Overgrowth Process for Fabrication of InGaN Inner Stripe Laser Diodes
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
- The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
- Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
- Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
- High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
- High-Power InGaAlP Laser Diodes for High-Density Optical Recording
- Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
- Highly Reliable Transverse-Mode Stabilized InGaAlP Visible Light Laser Diodes at High-Power Operation
- Solid Phase Crystallization in Initial Growth Region of Polycrystalline Silicon Layer During Deposition at 180℃ by Plasma Chemical Vapor Deposition
- Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition
- SIMS Study of Si-Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs-GaAs Superlattices
- SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs-GaAs Superlattice
- Mobility Profiles in Submicron WN_x-BPLDD-GaAs MESFETs
- Substituting Effect of Bi on Superconductor YBa_2Cu_3O_
- Comparative Studies between Ag-Sheathed YBa_2Cu_3O_y Wires and Sintered YBa_2Cu_3O_y
- Measurement of Finite Amplitude Ultrasound Wave Fields by Light Beam CT : Acoustical Measurements and Instrumentation