スポンサーリンク
The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan | 論文
- Enhancement of Acid Production in Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Resist Thickness Effect on Acid Concentration Generated in Poly(4-hydroxystyrene) Film upon Exposure to 75keV Electron Beam
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- Optimum Dissolution Point of Chemically Amplified Resists in Terms of Trade-Off Relationships between Resolution, Line Edge Roughness, and Sensitivity
- Radiation Chemistry of Fluoronaphthalene as a Candidate for Absorption Enhancement Component of Chemically Amplified Extreme Ultraviolet Resists
- Backexposure Effect in Chemically Amplified Resist Process upon Exposure to Extreme Ultraviolet Radiation
- Ab Initio Study for Site Symmetry of Phosphorus-Doped Diamond
- Study on Positive--Negative Inversion of Chlorinated Resist Materials
- Reactivity of Halogenated Resist Polymer with Low-Energy Electrons
- Single-Component Chemically Amplified Resist Based on Dehalogenation of Polymer
- Potential Cause of Inhomogeneous Acid Distribution in Chemically Amplified Resists for Post Optical Lithography
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- Proton Dynamics in Chemically Amplified Electron Beam Resists
- Precise Control of Nanowire Formation Based on Polysilane for Photoelectronic Device Application
- Relationship between Acid Generator Concentration and Acid Yield in Chemically Amplified Electron Beam Resist
- Polymer-Structure Dependence of Acid Generation in Chemically Amplified Extreme Ultraviolet Resists
- Micro-/Nanofabrication of Cross-linked Poly(L-lactic acid) Using Electron Beam Nanoimprint Lithography
- Electron-Beam-Induced Decomposition Mechanisms of High-Sensitivity Chlorinated Resist ZEP520A
- Negative Magnetoresistance Generated by Combination of Spin--Orbit Interaction and Applied Magnetic Field
- Effect of Ultrahigh-Density Ionization of Resist Films on Sensitivity Using Extreme-Ultraviolet Free-Electron Laser