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The Institute of Industrial Science The University of Tokyo | 論文
- Fabrication of Si Nanostructures for Single Electron Device Applications by Anisotropic Etching
- Effects of fractionated irradiation with carbon ions on the NFSa fibrosarcoma in mice
- 多元LDPC符号を用いた量子誤り訂正(IBIS2010(情報論的学習理論ワークショップ))
- High Performance Accumulated Back-Interface Dynamic Threshold SOI MOS-FET's (AB-DTMOS) with Large Body Effect at Low Supply Voltage
- Loss of heterozygosity in heavy-ion-induced murine T-cell lymphomas
- Efficient and Secure Multiparty Generation of Digital Signatures Based on Discrete Logarithms (Special Section on Discrete Mathematics and Its Applications)
- Evidence for Creation of Gallium Antisite Defect in Surface Region of Bleat-Treated GaAs
- The Role of Gallium Antisite Defect in Activation and Type-Conversion in Si Implanted GaAs
- Rapid Thermal Annealing of Si^+ Implanted GaAs in the Presence of Arsenic Pressure by GaAs Powder
- Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs(Special Issue on Advanced Sub-0.1μm CMOS Devices)
- Effects of Dot Size and its Distribution on Electron Number Control in Metal-Oxide-Semiconductor-Field-Effect-Transistor Memories Based on Silicon Nanocrystal Floating Dots
- Characteristic Distributions of Narrow Channel Metal-Oxide-Semiconductor Field-Effect Transistor Memories with Silicon Nanocrystal Floating Gates
- Mechanisms of Deletion Formation in Notch1 Gene in Radiation-Induced Mouse Thymic Lymphomas
- Asymptotic Bounds for Unidirectional Byte Error-Correcting Codes (Special Section on Information Theory and Its Applications)
- Construction Techniques for Error-Control Runlength-Limited Block Codes
- Occlusion Robust and Illumination Invariant Vehicle Tracking for Acquiring Detailed Statistics from Traffic Images(Special Issue on Information System Technologies for ITS)
- Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- High-Performance Accumulated Back-Interface Dynamic Threshold SOI MOSFET (AB-DTMOS) with Large Body Effect at Low Supply Voltage
- Measurement of Energetic and Lateral Distribution of Interface State Density in FD SOI MOSFETs
- Suppression of Geometric Component of Charge Pumping Current in Thin Film Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors