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The Graduate School At Nagatsuta Tokyo Institute Of Technology | 論文
- Two-Gate Transistor for the Study of Si/SiO_2 Interface in Silicon-on-Insulator Nano-Channel and Nanocrystalline Si Memory Device
- Preparation Method and Optoelectrical Properties of a-Se/Cd_xSe_ Multilayer Films
- Design of Band Potential with a-Si_xGe_:H(F) Alloys
- Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing ( Quantum Dot Structures)
- Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen Plasma ( Plasma Processing)
- Superconducting Properties of Ultrathin Films of YBa_2Cu_3O_x Prepared by Metalorganic Chemical Vapor Deposition at 500℃
- Preparation and Characterization of YBaCuO Superconducting Films by Low-Temperature Chemical Vapor Deposition Using β-Diketonate Complex and N_2O
- Preparation of Highly Oriented Copper Films by Photo-Assisted Chemical Vapor Deposition Using β-Diketonate Complex
- Epitaxial Growth of YBaCuO Films on Sapphire at 500℃ by Metalorganie Chemical Vapor Deposition
- Hole Transport in Silicon Thin Films with Variable Hydrogen Content
- Preparation of Polycrystalline Silicon by Hydrogen-Radical-Enhanced Chemical Vapor Deposition
- Hole Transport in a-Si:H(F) Prepared by Hydrogen-Radical-Assisted Chemical Vapor Deposition
- Preparation of Highly Photoconductive a-SiGe_x from Fluorides by Controlling Reactions with Atomic Hydrogen
- Designing New Materials with Amorphous Semiconductors : Structure and Electrical Properties of Multiply Stacked a-Si/a-SiGe_x Layers
- The Role of Hydrogen Radicals in the Growth of a-Si and Related Alloys
- Highly Oriented ZnO Films Prepared by MOCVD from Diethylzinc and Alcohols
- 位相共役効果を用いた光計測・センシング
- Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma ( Quantum Dot Structures)
- 変形の確率的モデルによる金属中の応力状態の評価
- Effects of Ion-Beam-Irradiation on Morphology and Densification of CeO_2 Films Prepared by Ion-Beam-Assisted Deposition