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System Devices and Fundamental Research, NEC Corporation | 論文
- Alloy Semiconductor System with Tailorable Band-Tail: A Band-State Model and Its Verification Using Laser Characteristics of InGaN Material System : Optics and Quantum Electronics
- Fabrication of Self-Aligned Surface Tunnel Transistors with a 80-nm Gate Length
- Wavelength-Dispersive Total Reflection X-Ray Fluorescence with High-Brilliance Undulator Radiation at SPring-8
- Intra-Leve Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System
- Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method
- Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method
- Violation of a Variant Selection Rule in Atomic Ordering Observed in Ga_In_P with Sb Added during Growth : Semiconductors