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State Key Lab of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China | 論文
- Bletilla striata Polysaccharide Stimulates Inducible Nitric Oxide Synthase and Proinflammatory Cytokine Expression in Macrophages(GENETICS, MOLECULAR BIOLOGY, AND GENE ENGINEERING)
- 1.55μm InAsP/InGaAsP Strained Multiple-Quantum-Well Laser Diodes Grown by Solid-Source Molecular Beam Epitaxy
- Novel Planar Electrode Structure for High-Speed (>40GHz) Electroabsorption Modulators
- 40GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme
- Theoretical Analysis of Polarization Insensitive InGaAsP Multiple-Quantum-Wells Eletroabsorption Modulators with Negative Chirp
- Dry Etching Characteristics of AlGaN/GaN Heterostructures Using Inductively Coupled H_2/Cl_2, Ar/Cl_2 and BCl_3/Cl_2 Plasmas
- Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas
- Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method
- 40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme
- Effect of p–n Junction Location on Characteristics of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
- Optimization of Multiple Quantum Well Electroabsorption Modulators Based on Transmission Performance Simulation
- Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method
- Dry Etching Characteristics of AlGaN/GaN Heterostructures Using Inductively Coupled H2/Cl2, Ar/Cl2 and BCl3/Cl2 Plasmas
- 40 GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme