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Sony Research Center | 論文
- Effects of an Electric Field on the Decay Time of Luminescence from a GaAs/Ga_Al_As Multi-Quantum-Well Structure
- Effect of Electric Field on Transient Characteristics of Luminescence from GaAs/Ga_Al_As Multi-Quantum-Well Structure
- Improvement of Gate-Insulator/Silicon Interface Characteristics in Amorphous Silicon Thin Film Transistors
- Observation of Laser-Induced Melting of Silicon Film Followed by Amorphization
- Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film
- Measuring the Temperature of a Quartz Substrate during and after the Pulsed Laser-Induced Crystallization of a-Si:H
- Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by MBE
- High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Highly Uniform GaAs/AIAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
- In Vitro Monitoring of Live Cardiomyocytes Dynamics by a Scanning Near Field Optical Microscope Setup
- In Situ Observation of Pulsed Laser Doping : Semiconductors and Semiconductor Devices
- Fabrication of Heavily-Doped Polycrystalline Silicon Film Using a Laser-Doping Technique
- Crystalline Properties of Laser Crystallized Silicon Films
- The Gas Combustion of H_2 with N_2O Used for Rapid Thermal Annealing
- Novel Dual Wavelength Electro-Optical Bistability in InGaAs/AlGaAs Multiple Quantum Wells
- Dual Wavelength Electro-Optical Bistability in an Asymmetric Self-Electro-Optic Effect Device
- Application of Rapid Joule Heating Method to Fabrication of Polycrystalline Silicon Thin Film Transistors