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Solutions Research Laboratory Tokyo Institute of Technology | 論文
- An Inductorless Phase-Locked Loop with Pulse Injection Locking Technique in 90 nm CMOS (集積回路)
- 0.1V 13GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90nm Complementary Metal Oxide Semiconductor (Special Issue : Solid State Devices and Materials (2))
- RF signal generator using time domain harmonic suppression technique in 90nm CMOS
- A Three-Stage Inverter-Based Stacked Power Amplifier in 65 nm Complementary Metal Oxide Semiconductor Process
- A Study of Digitally Controllable Radio Frequency Micro Electro Mechanical Systems Inductor
- Planar Solenoidal Inductor in Radio Frequency Micro-Electro-Mechanical Systems Technology for Variable Inductor with Wide Tunable Range and High Quality Factor
- 1.2--17.6 GHz Ring-Oscillator-Based Phase-Locked Loop with Injection Locking in 65 nm Complementary Metal Oxide Semiconductor
- An Inverter-Based Wideband Low-Noise Amplifier in 40 nm Complementary Metal Oxide Semiconductor
- Injection-locked fractional frequency multiplier with automatic reference pulse-selection technique
- A Ring-VCO-Based Injection-Locked Frequency Multiplier with Novel Pulse Generation Technique in 65nm CMOS
- An Inductorless Phase-Locked Loop with Pulse Injection Locking Technique in 90nm CMOS
- Fractionally Injection-Locked Frequency Multiplication Technique with Multi-Phase Ring Voltage-Controlled Oscillator
- C-12-11 Indutors and Transformers on 65 nm CMOS Technology for 60 GHz Applications
- Fractionally Injection-Locked Frequency Multiplication Technique with Multi-Phase Ring Voltage-Controlled Oscillator (Special Issue : Solid State Devices and Materials)
- C-12-23 A1.8 GHz, 2.2 Watt Fully Integrated CMOS Power Amplifier
- A Ring-VCO-Based Injection-Locked Frequency Multiplier with Novel Pulse Generation Technique in 65nm CMOS