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Sharp Laboratories of America, Inc. | 論文
- 大画面液晶テレビ用超薄型タンデムLEDバックライト
- One Transistor Ferroelectric Memory Devices with Improved Retention Characteristics
- Fabrication and Characterization of Sub-Micron Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistors withPt/Pb_5Ge_3O_/ZrO_2/Si Structure : Surfaces, Interfaces, and Films
- Phase and Microstructure Analysis of Lead Germanate Thin Film Deposited by Metalorganic Chemical Vapor Deposition
- Studies of Ir-Ta-O as High Temperature Stable Electrode Material and Its Application for Ferroelectric SrBi_2Ta_2O_9 Thin Film Deposition
- The Effect of Al Interlayer on TiSi_2 Formation
- Synthesis of Metallic Iridium Oxide Nanowires via Metal Organic Chemical Vapor Deposition
- Thermal Stability and Interfacial Reaction of Barrier Layers with Low-Dielectric-Constant Fluorinated Carbon Interlayer
- Advanced Ti Silicide Technology with Buffer Thin Al Layer
- Thin Gate Dielectric Materials Grown in Mixtures of N_2O and O_2 : Electrical Characteristics and Interfacial Nitrogen Concentration
- One Transistor Ferroelectric Memory Devices with Improved Retention Characteristics
- Post-Gate Oxidation Treatments that Improve the Reliability of Thin Rapid Thermal Processed Oxides