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Sharp Corp. Nara Jpn | 論文
- Crystal Structure, Oxygen Content and Superconductivity of M_xLa_CuO_ (M=Ba, Sr and Ca) : Electrical Properties Condensed Matter
- Four States of Surface-Stabilized Ferroelectric Liquid Crystal with Parallel Rubbing
- Effect of Surface Pretilt Angle on Optical Properties of Surface-Stabilized Ferroelectric Liquid Crystals
- Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Temperature Dependence of Electrical Properties of Nitrogen-Doped 3C-Sit
- High-Temperature Operation of Silicon Carbide MOSFET
- Annealing Effects on Al and AN-Si Contacts with 3C-SiC
- The effect of trunk muscle exercises in patients over 40 years of age with chronic low back pain
- The Transcutaneous Electrical Nerve Stimulation Applied to Contralateral Limbs for the Phantom Limb Pain
- Mechanism of Cadmium Stimulation on the Production of Fibrinolytic Proteins in Vascular Endothelial Cells (Proceedings of the 23rd Symposium on Toxicology and Environmental Health)
- Elevated Polycide Source/Drain Shallow Junctions with Advanced Silicidation Processing and Al Plug/Collimated PVD (Physical Vapor Deposition)- Ti/TiN/Ti/Polycide Contact for Deep-Submicron Complementary Metal-Oxide Semiconductors
- Cathodoluminescence Imaging of n-Type Porous Silicon
- Improvement of SiO_2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing
- Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃
- Novel Switching with Gray Scale in Surface-Stabilized Ferroelectric Liquid Crystal Devices
- Spin Relaxation of Electrons in Strained-GaAs-Layer Photocathode of Polarized Electron Source
- Improvement of YBa_2Cu_3O_x Single-Crystal Surface by Chemical Etching
- Improved Characteristics of p^+-n Junctions formed by Excimer Laser Annealing with Low Temperature Pre-Annealing
- Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates