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Seoul National Univ. Seoul Kor | 論文
- O-153 西南日本白亜系関門層群中の古土壌
- A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)
- A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)
- Characteristic of Dual-Gate Single Electron Transistor (DG-SET) with extended channel using shallow doping and sidewall patterning for suppressing MOS current(Session 9B : Nano-Scale devices and Physics)
- 大腸菌O9:K103:NM, 987P^+ST^+感染豚の下部小腸の複合糖質のレクチン結合能(短報)
- Nanoscale Multi-Line Patterning Using Sidewall Structure
- Single-Electron MOS Memory with a Defined Quantum Dot Based on Conventional VLSI Technology
- Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire
- Single Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire
- Single Electron Memory with a Defined Poly-Si Dot Based on Conventional VLSI Technology
- Room Temperature Coulomb Oscillation of a Single Electron Switch with an Electrically Formed Quantum Dot and Its Modeling
- Room Temperature Coulomb Oscillation of a Single Electron Switch with an Electrically Formed Quantum Dot and Its Modeling
- Purification and Molecular Cloning of Calobin, a Thrombin-Like Enzyme from Agkistrodon caliginosus (Korean Viper)^1
- 耳由来線維芽細胞から再構築された胚に由来するフリーマーチンの発生 (短報)
- GERI-BP002-A, Novel Inhibitor of Acyl-CoA: Cholesterol Acyltransferase Produced by Aspergillus fumigatus F93
- Extraction of Trap Depth in Flash Cell Having Arch-Active Structure
- Design and Simulation of Self-Aligned Vertical Island Single Electron Transistor (VI-SET) with Electrical Tunneling Barrier
- Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices
- Design and Simulation of Self-Aligned Vertical Island Single Electron Transistor (VI-SET) with Electrical Tunneling Barrier
- Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices