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Semiconductor Research Laboratory Clarion Co. Ltd. | 論文
- Selective Epitaxial Growth by Ultrahigh-Vacuum Chemical Vapor Deposition with Alternating Gas Supply of Si_2H_6 and Cl_2
- Selective Growth of GaAs/Si by One-Step Low-Pressure Metalorganie Chemical Vapor Deposition
- Tunable Optical Stop Band and Reflection Peak in Synthetic Opal Infiltrated with Liquid Crystal and Conducting Polymer as Photonic Crystal
- Surface Defect Formation in Epitaxial Si Grown on Boron-Doped Substrates by Ultrahigh Vacuum Chemical Vapor Deposition(Structure and Mechanical and Thermal Properties of Condensed Matter)
- Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition
- Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
- Interrelation of Si Internal Stress and Si/SiO_2 Interface Stress
- Tunable Optical Stop Band Utilizing Thermochromism of Synthetic Opal Infiltrated with Conducting Polymer
- Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors
- Electrical Characteristics in Al/ZnO/SiO_2/Si Structure : Acoustics Materials
- Study of Blackening Effects of Indium-Tin Oxide by Depositing Sputtered Ta_2O_5
- SAW Convolver Utilizing Sezawa Wave in a Monolithic ZnO/Si Configuration : Communication Devices and Materials
- Tunable Surface-Acoustic-Wave Generator on a Monolithic MIS Structure : C-5: ACOUSTIC DEVICES
- The Formation of Nonradiative Areas for Electroluminescent Devices Using SrS:CeCl_3 Phosphor Prepared by Multisource Deposition
- The Characteristics of a SrS:CeCl_3 Thin-Film Electroluminescent Device Prepared by Multi-Source Deposition Method
- Minority-Carrier Response in MIS Surface-Acoustic-Wave Convolver
- A New Electrochromic Material: 1,4-Benzoquinone in a Non-Aqueous Solution