Study of Blackening Effects of Indium-Tin Oxide by Depositing Sputtered Ta_2O_5
スポンサーリンク
概要
- 論文の詳細を見る
When Ta_2O_5 dielectric film was deposited on an indium-tin-oxide (ITO)-coated glass substrate by rf reactive sputtering, the blackening of ITO was observed. It was confirmed that the residual gas during sputtering is related to the blackening of ITO. The presputtering in argon-oxygen mixture gas and the following evacuation to basal pressure (less than 1×10^<-6> Torr) yield Ta_2O_5 films without ITO blackening.
- 社団法人応用物理学会の論文
- 1991-07-15
著者
-
Chubachi Yoshiki
Semiconductor Research Laboratory Clarion Co. Ltd.
-
AOYAMA Kazushi
Semiconductor Research Laboratory, Clarion Co., Ltd.
-
Aoyama Kazushi
Semiconductor Research Laboratory Clarion Co. Ltd.
関連論文
- Study of Blackening Effects of Indium-Tin Oxide by Depositing Sputtered Ta_2O_5
- The Formation of Nonradiative Areas for Electroluminescent Devices Using SrS:CeCl_3 Phosphor Prepared by Multisource Deposition
- The Characteristics of a SrS:CeCl_3 Thin-Film Electroluminescent Device Prepared by Multi-Source Deposition Method