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Semiconductor Process Laboratory Co., Ltd. | 論文
- Low-k SiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor
- Properties of Low-k Cu Barrier SiOCNH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition using Hexamethyldisiloxane and Ammonia Gases
- Pore Characteristics of Low-Dielectric-Constant Films Grown by Plasma-Enhanced Chemical Vapor Deposition Studied by Positron Annihilation Lifetime Spectroscopy : Instrumentation, Measurement, and Fabrication Technology
- The Effect of Vapor Etching on "Diffuse-Up" of Buried Impurities into Epitaxial Layer
- Evaluation of Parameters in Atmospheric-Pressure Chemical Vapor Deposition of Borophosphosilicate Glass Using Tetraethylorthosilicate and Ozone : Semiconductors
- Morphology Evolution of SiO_2 Films Deposited by Tetraethylorthosilicate/O_3 Atmospheric-Pressure Chemical Vapor Deposition on Thermal SiO_2
- Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition Using 2, 4, 6, 8-Tetramethylcyclotetrasiloxane and Ozone
- Low Temperature Chemical Vapor Deposition of High Quality SiO_2 Film Using Helicon Plasma Source