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Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt | 論文
- Femtosecond Transient Reflecting Grating Methods and Analysis of the Ultrafast Carrier Dynamics on Si(111) Surfaces
- SiN_x:H/SiO_2 Double-Layer Passivation With Hydrogen-Radical Annealing For Solar Cells
- Photoluminescence of Si-Rich SiO_2 Films : Si Clusters as Luminescent Centers
- Base Current Control in Low-V_-Operated SiGeC Heterojunction Bipolar Transistors Using SiGe-Cap Structure and High-Carbon-Content Base
- Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
- Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
- Strain Relaxation Processes in GaAs on Si by Two Groups of Misfit Dislocations
- Systematic Aspects of the Electronic Structure of 3d Transition-Metal Compounds
- Growth and Characterization of GaAs/GaSe/Si Heterostructures
- GaAs/AlAs and AlAs/GaAs Interface Formation Process Studied by Coaxial Impact-Collision Ion Scattering Spectroscopy: Comparison between Alternating and Simultaneous Source Supply
- In-Situ Characterization of Compound Semiconductor Surfaces by Novel Photoluminescence Surface State Spectroscopy
- A Novel Contactless and Nondestructive Measurement Method of Surface Recombination Velocity on Silicon Surfaces by Photoluminescence
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique : Etching and Deposition Technology
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique
- Improvement of Properties of SrTiO_3 Thin Films Deposited at Low Temperature and High Rate by Sputtering Gas
- Low-Temperature and High-Rate Deposition of SrTiO_3 Thin Films by RF Magnetron Sputtering
- Fine-Tolerance Resonator Applications of Bismuth-Layer-Structured Ferroelectric Ceramics
- Energy Trapping Characteristics of Bismuth Layer Structured Compound CaBi_4Ti_4O_
- Atomic-Scale Planarization of 6-Inch Si(001) Substrate by UHV Heating