スポンサーリンク
Sematech Tx Usa | 論文
- Ultra-Short Pulse Current-Voltage Characterization of the Intrinsic Characteristics of High-κ Devices
- Ultra-Short Pulse I-V Characterization of the Intrinsic Behavior of High-κ Devices
- NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ALD-TiN Gate Stacks
- Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode
- Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications
- Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric
- Transient charging and relaxation in high-k gate dielectrics and its implications
- Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode
- Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric
- Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
- Effects of O_2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs
- A Comparison of Cl_2 and HBr/Cl_2-Based Polysilicon Etch Chernistries : Impact on SiO_2 and Si Substrate Damage