A Comparison of Cl_2 and HBr/Cl_2-Based Polysilicon Etch Chernistries : Impact on SiO_2 and Si Substrate Damage

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概要

• 論文の詳細を見る

• The damage produced in thin SiO_2/Si structures after plasma exposure in Cl_2-based or HBr/Cl_2-based reactive ion etching environments is iexamined. The etch chemistries and parameters used were those of a poly-Si gate overetch. In this study, the damage present in the SiO_2 and Si substrate after these etch exposures and that remaining after a 900℃ 1 hour Ar anneal is examined for both etch chemistries. Oxide reliability is shown to be affected even by the more benign etch, even after the annealing. On the other hand, Si substrate defects are annealed out to low levels after a 700℃ 1 hour anneal for both chemistries. These defects are, however, present in numbers that are large enough to affect generation lifetimes either immediately after etch or at intermediate an-nealing temperatures.

• 社団法人応用物理学会の論文
• 1993-06-30

著者

• Li Xiaoyu

  Department Of Electronics And Information Science Kyoto Institute Of Technology

• Viswanathan C

  Sematech Tx Usa

• Boden E.

  Sematech Austin

• REMBETSKI John

  SEMATECH Austin

• CHAN Y

  SEMATECH Austin

• GU Tieer

  Electronic Materials and Processing Research Laboratory, The Pennsylvania State University

• AWADELKARIM O.O.

  Electronic Materials and Processing Research Laboratory, The Pennsylvania State University

• DITIZIO R.A.

  Electronic Materials and Processing Research Laboratory, The Pennsylvania State University

• FONASH S.J.

  Electronic Materials and Processing Research Laboratory, The Pennsylvania State University

• VISWANATHAN C.R.

  Department of Electrical Engineering, University of California at Los Angeles

• Fonash S.j.

  Electronic Materials And Processing Research Laboratory The Pennsylvania State University

• Chan Y

  Univ. California Ca Usa

• Gu Tieer

  Electronic Materials And Processing Research Laboratory The Pennsylvania State University

• Awadelkarim O.o.

  Electronic Materials And Processing Research Laboratory The Pennsylvania State University

• Ditizio R.a.

  Electronic Materials And Processing Research Laboratory The Pennsylvania State University

関連論文

• Bias-enhanced Nucleation of Oriented Diamond on Singlecrystalline 6H-SiC Substrates
• Diamond Nucleation on Singlecrystalline 6H-SiC Substrates by Bias-Enhanced Nucleation in Hot Filament Chemical Vapor Deposition
• A Comparison of Cl_2 and HBr/Cl_2-Based Polysilicon Etch Chernistries : Impact on SiO_2 and Si Substrate Damage

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