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Selete | 論文
- 2006 VLSIテクノロジーシンポジウム報告
- 100nm世代のSoCプラットフォームに向けた丈高速および低電力/RF用途対応50nmCMOS技術
- Systematic studies on Fermi level pining of Hf-based high-k gate stacks
- Full-Metal-Gate Integration of Dual-Metal-Gate HfSiON CMOS Transistors by Using Oxidation-Free Dummy-Mask Process
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
- Wide Controllability of Flatband Voltage in La_2O_3 Gate Stack Structures : Remarkable Advantages of La_2O_3 over HfO_2
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI,AWAD2006)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
- First-principles studies on metal induced gap states (MIGS) at metal/high-k HfO_2 interfaces
- KrFエキシマレ-ザ露光技術 (半導体デバイス特集) -- (基盤技術)
- PacRim-CMP 2004国際会議報告
- Spatial Fluctuation of Electrical properties in Hf-Silicate Film Observed with Scanning Capacitance Microscopy