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Seiko Epson Corporation Technology Platform Research Center | 論文
- High-Quality Gate-SiO_x and SiO_x/Si Interface Formation at Low Temperature Using Plasma-Enhanced Chemical Vapor Deposition
- Low-Temperature Formation of Device-Quality SiO_2/Si Interfaces Using Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
- Novel Si Codoped Pb(Zr, Ti, Nb)O_3 Thin Film for High-Density Ferroelectric Random Access Memory
- Preparation of Novel PZTN Thin Film Co-doped Si
- Relationship between Lattice Deformation and Polarization in BaTiO_3
- Electronic States of Perovskite-Type Oxides and Ferroelectricity
- High-Quality SiO_2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor(Semiconductors)
- Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing
- Overdense Plasma Production Using Electron Cyclotron Waves
- New Microwave Launcher for Producing ECR Plasmas without Window Contamination I. : Excitation of Electron Cyclotron Wave
- Stochastic Electron Acceleration by an Electron Cyclotron Wave Propagating in an Inhomogeneous Magnetic Field
- Heat Treatment with High-Pressure H_2O Vapor of Pulsed Laser Crystallized Silicon Films
- Electrical Properties of Excimer-Laser-Crystallized Lightly Doped Polycrystalline Silicon Films