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School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center (sprc) Chonbu | 論文
- In-Situ Transmission Electron Microscopy Investigation of the Interfacial Reaction between Er and SiO_2 Films
- Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta_2O_5 gate stacks(Session 7A : Gate Oxides)
- Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta_2O_5 gate stacks(Session 7A : Gate Oxides)
- Selective epitaxial growth of SiGe layers with High aspect ratio mask of dielectric films (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Stress effect analysis for PD-SOI pMOSFETs with undoped-Si0.88Ge0.12 heterostructure channel (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Selective epitaxial growth of SiGe layers with High aspect ratio mask of dielectric films (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Stress effect analysis for PD-SOI pMOSFETs with undoped-Si0.88Ge0.12 heterostructure channel (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Selective Epitaxial Growth of SiGe Layers with High Aspect Ratio Mask of Dielectric Films
- Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si_Ge_ Heterostructure Channel
- Influence of Pt-related deep traps formed in rectifier junctions on high-speed and Low-leakage properties (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Influence of Pt-related deep traps formed in rectifier junctions on high-speed and Low-leakage properties (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO_2 Gate Dielectric
- Enhancement of Light Extraction from GaN-Based Light-Emitting Diodes by Coating Surface with Al2O3 Powder
- Laser-Induced Synthesis of CaMoO_4 Nanocolloidal Suspension and Its Optical Properties
- Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta_2O_5 Gate Stacks