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Rohm Co. Ltd. Kyoto Jpn | 論文
- Role of Dislocation in InGaN Phase Separation
- Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes
- Plasma-assisted Molecular Beam Epitaxy of High Optical Quality MgZnO Films on Zn-polar ZnO Substrates
- Reactive Ion Etching of GaN and Al_xGa_N Using Cl_2/CH_4/Ar Plasma
- Selective Etching of GaN over Al_xGa_N Using Reactive Ion Plasma of Cl_2/CH_4/Ar Gas Mixture
- High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
- Blue Photoluminescence from ZnCdO Films Grown by Molecular Beam Epitaxy
- Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes
- Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals
- Study on Pb-Based Ferroelectric Thin Films Prepared by Sol-Gel Method for Memory Application ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Surface Morphology of Lead-Based Thin Films and Their Properties ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Preparation of Pb(Zr,Ti)O_3 Films on Pi/Ti/Ta Electrodes by Sol-Get Process
- Electrical Properties of Pb(Zr, Ti)O_3 Thin Film Capacitors on Pt and Ir Electrodes
- Preparation of Pb(Zr, Ti)O_3 Thin Films on Ir and IrO_2 Electrodes ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Micro-Patterning of PbZr_xTi_O_3 Thin Films Prepared by Photo Sensitive Sol-Get Solution