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Research Laboratory, Matsushita Electronics Corporation | 論文
- A New Heterojunction-Gate GaAs FET : A-4: FIELD EFFECT TRANSISTORS (I)
- Crystal Growth and Orientation of Vacuum Deposited Films of CdTe
- Distribution Coefficinets of Se and Zn in InAs Crystals
- Vapor Growth of GaAs_P_x by the Pyrolysis of Ga(CH_3)_3, AsH_3 and PH_3
- The Concentration Profiles of Phosphorus, Arsenic and Recoiled Oxygen Atoms in Si by Ion Implantation into SiO_2-Si
- Asymmetrical Profiles of Ion Implanted Phosphorus in Silicon
- Thickness Dependence of Output Power and Response Time of Double-Heterostructure LED's
- Variation of Liquid and Solid Compositions during LPE Growth from a Ternary Component Solution
- Diffusion of Thallous Ions into Potassium Bromide Single Crystals