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Research Center of Ion Beam Technology, Hosei University | 論文
- Characterization of WN_x/GaAs Schottky Contacts Formed by Reactive RF Sputtering
- Study of Surface Processes in the Digital Etching of GaAs
- Thermal Decompositiom of Ce0_2 in Ultra High Vacuum as a Cause of Polycrystalline Growth of Si Films on Epitaxial Ce0_2/Si
- Low-Temperature Epitaxial Growth of CeO_2(110)/Si(100) Structure by Evaporation under Substrate Bias
- Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System
- A framework for presentation and use of everyday interaction histories (日韓合同ワークショップ 1st Korea-Japan Joint Workshop on Ubiquitous Computing and Networking Systems (ubiCNS 2005))
- RBS/Channeling Study of the Crystallographic Correlation for Epitaxial CeO_2 on Si
- High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
- Electrical Characteristics of Metal/Cerium Dioxide/Silicon Structures
- Quantitative Analysis of Oxygen Deficiency in Epitaxial CeO_2 Layers on Siby Detecting ^O Added for Stoichiometry
- Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO_2 Layers and Si Substrates
- Electrical Properties of N Ion Implanted Layer in (11^^00)-Oriented 6H-SiC
- Texture Structure Analysis and Crystalline Quality Improvement of CeO_2(110) Layers Grown on Si(100) Substrates