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Research Center for Interface Quantum Electronics, Hokkaido University | 論文
- Ordered Quantum Dots: Atomic Force Microscopy Study of a New Self-Organizing Growth Mode on GaAs (311)B Substrates
- MOVPE Condition Dependences of MnAs Nanoclusters Grown on GaInAs (111)A Surfaces
- Formation of InAs Dots on AlGaAs Ridge Wire Structures by Selective Area MOVPE Growth
- Formation of InAs Dots on AlGaAs Ridge Wires Structure by Selective Area MOVPE Growth
- Initial Stage of InGaAs Growth on GaAs Multiatomic Steps by MOVPE
- Temperature Dependence of Si Delta-Doping on GaAs Singular and Vicinal Surfaces in Metalorganic Vapor Phase Epitaxy
- Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
- Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AlGaAs Layers on GaAs (100) and (311)B Substrates
- Characterization of Potential Modulation in Novel Lateral Surface Superlattices Formed on GaAs Multiatomic Steps
- Delta-Doping and the Possibility of Wire-like Incorporation of Si on GaAs Vicinal Surfaces in Metalorganic Vapor Phase Epitaxial Growth
- Delta-Doping of Si on GaAs Vicinal Surfaces and Its Possibility of Wirelike Incorporation in Metalorganic Vapor Phase Epitaxial Growth
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by Metalorganic Vapor Phase Epitaxy: Investigation of Transport Properties
- A Novel Electron Wave Interference Device Using Multiatomic Steps on Vicinal GaAs Surfaces Grown by MOVPE : Investigation of Transport Properties
- Formation of Oxide-Free Nearly Ideal Pt/GaAs Schottky Barriers by Novel In Situ Photopulse - Assisted Electrochemical Process
- In-Situ Characterization of Compound Semiconductor Surfaces by Novel Photoluminescence Surface State Spectroscopy
- A Novel Contactless and Nondestructive Measurement Method of Surface Recombination Velocity on Silicon Surfaces by Photoluminescence
- Self-Assembled InAs Quantum Dots Buried in AlGaAs Barrier and Their Application to Split-Gate HEMT Operating at 77K
- Fabrication of p^+-Gate InAs-Channel HEMT Based on InP
- Fabrication of p^+-Gate InAs-Channel HEMT Based on InP
- Charging Effect of InAs Dots in Split-Gate High Electron Mobility Transistor Structure ( Quantum Dot Structures)