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Research Center For Integrated Quantum Electronics Hokkaido University | 論文
- One- and two-dimensional spectral diffusion of type-II excitons in InP/InAs/InP core-multishell nanowires
- Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- 原子層エピタキシ法によるInAs/GaAs量子井戸の形成と評価
- MOVPE選択成長法を用いたInP系ピラー型2次元フォトニック結晶構造の作製と評価(量子効果デバイス及び関連技術)
- Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- 25pWJ-7 InP/InAs/InPコアマルチシェル型ナノワイヤにおける光励起キャリアの過渡現象(量子井戸・超格子ほか,領域4,半導体,メゾスコピック系・局在)
- 21pTG-6 InP/InAs/InPコアマルチシェル型ナノワイヤの励起子過程(量子井戸・超格子,領域4,半導体,メゾスコピック系・局在)
- 18pTA-5 InP/InAs/InPコアマルチシェル型ナノワイヤの時間分解発光スペクトルII(量子井戸・超格子,領域4,半導体,メゾスコピック系・局在)
- 24aXL-7 InP/InAs/InPコアマルチシェル型ナノワイヤの時間分解発光スペクトル(24aXL 量子井戸・超格子,領域4(半導体,メゾスコピック系・局在))
- Fabrication of InP/InAs/InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy
- Realization of conductive InAs nanotubes based on lattice-mismatched InP/InAs core-shell nanowires
- Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy
- Interface characterization of Al_2O_3/AlGaN structures prepared by atomic layer deposition
- Characterization of GaN surfaces after high-temperature annealing and carbon diffusion(Session9B: GaN and SiC Device Process Technology)
- Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress(Plenary,Heterostructure Microelectronics with TWHM2005)
- 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)
- 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)
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