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Process Development Division, Fujitsu Ltd. | 論文
- Cleaning of Silicon Surfaces by NF_3-Added Hydrogen and Water-Vapor Plasma Downstream Treatment
- Cleaning of Silicon Surfaces by NF_3 Added Hydrogen and Water Vapor Plasma Downstream Treatment
- Native Oxide Removal on Si Surfaces by NF_3-Added Hydrogen and Water Vapor Plasma Downstream Treatment
- Effects of H_2O on Atomic Hydrogen Generation in Hydrogen Plasma
- Hydrogen Molecules in Defective Silicon
- Formation of Hydrogen Molecules in n-Type Silicon
- Hydrogen Passivation of Donors and Hydrogen States in Heavily Doped n-Type Silicon
- Influence of Electrode Contacts on Leakage Current of SrTiO_3 Capacitors
- RuO_2 Thin Films as Bottom Electrodes for High Dielectric Constant Materials
- New Cleaning Solution ; Mixture of HF/HCl and Pure Water Containing a Little Dissolved Oxygen
- Characterization of Cleaning Technology for Silicon Surfaces by Hot Pure Water Containing Little Dissolved Oxygen
- Thickness-Deconvolved Structural Properties of Thermally Grown Silicon Dioxide Film
- Characterization of a Cleaning Technology for Silicon Surface by Hot Pure Water Containing a Little Dissolved Oxygen
- In-Situ Observation of Oxygen Exposed Hydrogen Terminated Silicon Surfaces
- Effects of Dissolved Oxygen in HF Solutiom on Silicon Surface Morphology
- High-Rate Bias Sputtering Filling of SiO2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas