スポンサーリンク
Plasma Research Center University Of Tsukuba:(present)naka Fusion Research Establishment Japan Atomi | 論文
- Investigation of Edge Plasmas in the Anchor Cell Region of GAMMA 10 : Fluids, Plasmas, and Electric Discharges
- Measurement of End Loss Electrons and Ions from a Hot Ion Plasma in a Tandem Mirror
- Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
- A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
- Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
- Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
- Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
- Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
- Potential Distribution in the End Region of the GAMMA10 Tandem Mirror Associated with Electron Flow Control
- Current Balance at an Endplate of the GAMMA10 Tandem Mirror
- Validity of a Model Electron Distribution Function in an End Region of a Tandem Mirror
- A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
- Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
- Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
- Effect of Chelating Agents on High Resolution Electron Beam Nanolithography of Spin-Coatable Al_2O_3 Gel Films
- Observation of a Radial Current at a Plug/Barrier Cell in GAMMA10 : Fluids, Plasmas, and Electric Discharges
- Microoptical Two-Dimensional Devices for the Optical Memory Head of an Ultrahigh Data Transfer Rate and Density Sytem Using a Vertical Cavity Surface Emitting Laser (VCSEL) Array
- Fabrication of Micro-Pyramidal Probe Array with Aperture for Near-Field Optical Memory Applications
- Temperature Dependence of Piezoelectric Constant of 0.5PbNi_Nb_O_3-0.5Pb(Zr, Ti)O_3 Ceramics in the Vicinity of Morphotropie Phase Boundary